2002. 6. 25 1/3 semiconductor technical data kn2907s/as epitaxial planar pnp transistor revision no : 3 general purpose application. switching application. features low leakage current : i cex =-50na(max.) ; v ce =-30v, v eb =-0.5v. low saturation voltage : v ce(sat) =-0.4v(max.) ; i c =150ma, i b =-15ma. complementary to the kn2222s/2222as. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 + _ characteristic symbol rating unit kn2907s KN2907AS collector-base voltage v cbo -60 v collector-emitter voltage v ceo -40 -60 v emitter-base voltage v ebo -5 v collector current i c -600 ma collector power dissipation (ta=25 ) p c 150 mw p c * 350 junction temperature t j 150 storage temperature range t stg -55 150 note : * package mounted on 99.5% alumina 10 8 0.6 ) type name marking lot no. zda type name lot no. zha mark spec type mark kn2907s zda KN2907AS zha
2002. 6. 25 2/3 revision no : 3 electrical characteristics (ta=25 ) kn2907s/as * pulse test : pulse width 300 s, duty cycle 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =-30v, v eb =-0.5v - - -50 na collector cut-off current kn2907s i cbo v cb =-50v, i e =0 - - -20 na KN2907AS - - -10 collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -60 - - v collector-emitter * breakdown voltage kn2907s v (br)ceo i c =-10ma, i b =0 -40 - - v KN2907AS -60 - - emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v dc current gain kn2907s h fe (1) i c =-0.1ma, v ce =-10v 35 - - KN2907AS 75 - - kn2907s h fe (2) i c =-1.0ma, v ce =-10v 50 - - KN2907AS 100 - - kn2907s h fe (3) i c =-10ma, v ce =-10v 75 - - KN2907AS 100 - - kn2907s h fe (4) * i c =-150ma, v ce =-10v 100 - 300 KN2907AS kn2907s h fe (5) * i c =-500ma, v ce =-10v 30 - - KN2907AS 50 - - collector-emitter saturation voltage * v ce(sat) 1 i c =-150ma, i b =-15ma - - -0.4 v v ce(sat) 2 i c =-500ma, i b =-50ma - - -1.6 base-emitter saturation voltage * v be(sat) 1 i c =-150ma, i b =-15ma - - -1.3 v v be(sat) 2 i c =-500ma, i b =-50ma - - -2.6 transition frequency f t v ce =-20v, i c =-50ma, f=100mhz 200 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 8 pf
2002. 6. 25 3/3 kn2907s/as revision no : 3 capacitance c (pf) 0 ob -30 -10 -3 -1 collector-base voltage v (v) cb c - v h - i c collector current i (ma) -1 -3 -10 -30 1k fe dc current gain h 10 collector current i (ma) saturation voltage -3 -1 be(sat) -30 -10 c v ,v - i fe c -300 -1k 30 50 100 300 500 -100 v =-10v ce be(sat) ce(sat) c v ,v (v) ce(sat) -100 -300 -1k -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 v be(sat) ce(sat) v ob cb -100 -200 i /i =10 cb 2 4 6 8 12 i =0 f=1mhz e 10 collector power dissipation c ambient temperature ta ( c) pc - ta p (mw) 0 0 25 50 75 100 125 150 100 200 300 400 500 mounted on 99.5% aiumina 10 x 8 x 0.6mm ta=25 c 1 2 1 175 2
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